High-speed modulation of single-mode and multi-mode 850 nm, intra-cavity contacted, shallow implant-apertured, vertical-cavity surface-emitting lasers

摘要

Summary form only given. GaAs/AlGaAs quantum well, 850 nm vertical-cavity surface-emitting lasers (VCSELs) with lateral current injection and shallow implanted apertures were fabricated. The device performance was characterized using small-signal and large-signal analysis, power-current-voltage measurements, and optical spectra measurements.