808 nm TM-polarized GaAsP/AlGaAs high-power Al-free-active region laser diodes with high efficiency and small divergence

摘要

The laser structures were grown by LP-MOVPE on GaAs substrates. All structures have a single tensile-strained GaAsP QW. The QW is embedded in a 1000 nm or 2000 nm thick AlGaAs waveguide layer. The high gain of tensile strained GaAsP QWs in combination with a low loss large optical cavity (LOC) broadened waveguide structure results in low threshold current narrow beam lasers with high efficiency. Based on this vertical structure we investigated single broad emitter lasers, laser bars, lasers with self aligned stripe structure and with tapered gain region.