Growth and characterisation of GaN grown by microwave plasma assisted laser-induced chemical vapour deposition

摘要

Growth of microcrystalline GaN films by microwave plasma assisted laser-induced chemical vapour deposition has been studied in the temperature range of 525/spl deg/C - 650/spl deg/C for growth on sapphire and silicon. The influence of substrate temperature is discussed and growth mechanisms are explained. Properties of the GaN films are measured by X-ray diffraction and optical transmission spectroscopy.