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AVT-RIT-NSF partnership for the development of low voltage thin film phosphor for field emission display devices

机译:AVT-RIT-NSF合作伙伴关系,用于开发用于场发射显示设备的低压薄膜磷光体

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This paper describes the development of a low voltage thin film phosphor material by an alliance between the Rochester Institute of Technology, Advanced Vision Technology Inc., a Rochester based small company and the National Science Foundation (NSF) through the NSF's small business technology transfer (STTR) program. The overall goal of the Phase I program was to develop tantalum zinc oxide (TZO), a novel low voltage blue phosphor that can be deposited in thin film form and integrated with semiconductor device fabrication for flat panel display applications. A lower temperature process for depositing TZO thin films was achieved by rf sputtering from a ZnO-Ta mosaic target. A thorough investigation of the intrinsic blue luminescence showed that the mechanism responsible for luminescence in TZO is metal-to-ligand (Ta 5d/sup 0/-O 2p/sup 6/) radiative transition. Saturated red and green colors were obtained by doping the TZO host lattice with Mn. An exhaustive study of processing parameters, such as annealing, etching, and subsequent deposition processes was done. Successful integration of the TZO phosphor using standard IC processing was realized in working field emission devices.
机译:本文介绍了通过美国国家科学基金会(NSF)的小企业技术转让,由罗彻斯特理工学院,位于罗彻斯特的一家小型公司Advanced Vision Technology Inc.与美国国家科学基金会(NSF)之间的联盟开发的一种低压薄膜荧光粉材料。 STTR)程序。第一阶段计划的总体目标是开发钽锌氧化物(TZO),这是一种新型的低压蓝色磷光体,可以以薄膜形式沉积并与用于平板显示器应用的半导体器件制造集成在一起。通过从ZnO-Ta镶嵌靶进行射频溅射,可以实现较低温度的TZO薄膜沉积工艺。对本征蓝色发光的彻底研究表明,TZO中负责发光的机理是金属到配体(Ta 5d / sup 0 / -O 2p / sup 6 /)的辐射跃迁。通过用Mn掺杂TZO主晶格可获得饱和的红色和绿色。进行了详尽的工艺参数研究,例如退火,蚀刻和后续的沉积工艺。在工作场发射器件中,使用标准IC处理成功集成了TZO荧光粉。

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