Method of manufacturing a thin film, as well as the compound semiconductor, thin film phosphor, and the anode panel of field emission display

摘要

PROBLEM TO BE SOLVED: To solve a problem in producing a thin film in which a low quality crystal with deficiency of a specific component is formed on the surface and the laser light is absorbed and production of a compound in the deep layer of the thin film is not susceptible to happen.;SOLUTION: The invention relates to the method for producing thin film comprising formation of a material thin film by forming a second material thin film layer 2 using a material B as essential component, having an optical absorption end wavelength of λ_B corresponding to a band gap on a first material thin film layer 1 using a material A as essential component, having an optical absorption end wavelength of λ_A corresponding to a band gap, wherein each optical absorption end wavelength satisfies the relation λ_Bλ_A, and then irradiating a laser ray L1 with a wavelength λ_L which satisfies the relation of λ_Bλ_Lλ_A, from the second material thin film layer 2 side to the first material thin film layer 1 and forming a thin film 5 containing a compound including a compound thin film 4 mainly comprising a compound C having an optical absorption end wavelength λ_C corresponding to the band gap between the first material thin layer 1 and the second material thin layer 2.;COPYRIGHT: (C)2006,JPO&NCIPI