High-temperature and high-frequency performance evaluation of 4H-SiC unipolar power devices

摘要

Silicon carbide (SiC) unipolar devices have much higher breakdown voltages because of the ten times greater electric field strength of SiC compared with silicon (Si). 4H-SiC unipolar devices have higher switching speeds due to the higher bulk mobility of 4H-SiC compared to other polytypes. Four commercially available SiC Schottky diodes at different voltage and current ratings, an experimental VJFET, and MOSFET samples have been tested to characterize their performance at different temperatures. Their forward characteristics and switching characteristics in a temperature range of -50/spl deg/C to 175/spl deg/C are presented. The results of the SiC Schottky diodes are compared with those of a Si pn diode with comparable ratings.