Comparison of different nonlinear models applied in submicron gate length 5 W transistor of RPC /spl Lt/ISTOK/spl Gt/

摘要

For the submicrometer gate field effect transistor developed in R&PC "lstok" yielding 5 W output power in two and three centimeter wave length band, comparison of different nonlinear models, which are common for main system of MIS design has been carried out. It is found that being properly corrected, all models provided satisfactory agreement between calculated and experimental data in spite of apparent limitations peculiar to the models.