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Field-effect transistors with micron and submicron gate lengths
Field-effect transistors with micron and submicron gate lengths
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机译:具有微米和亚微米栅极长度的场效应晶体管
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摘要
A method for forming ohmic contacts of gold and germanium gold on a gallium arsenide substrate in which a layer of silicon dioxide is placed over the gold in the contact area prior to sinter alloying to improve wetting and reduce contact resistance.
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