首页> 外文会议> >Silicon MIS-varactors with the double layer dielectric films from rare-earth oxides

【24h】

Silicon MIS-varactors with the double layer dielectric films from rare-earth oxides

机译：具有稀土氧化物双层介电膜的硅MIS变容二极管

获取原文

页面导航

摘要
著录项
相似文献
相关主题

摘要

Electrical and physical properties of Al-Dy/sub 2/O/sub 3/-Gd/sub 2/O/sub 3/-Si MIS-structures have been investigated. Values of surface states density on the semiconductor-dielectric interface, values of surface generation velocity and the lifetime of minority charge carriers were determined.

机译：研究了Al-Dy / sub 2 / O / sub 3 / -Gd / sub 2 / O / sub 3 / -Si MIS结构的电学和物理性能。确定了半导体-电介质界面上的表面态密度的值，表面产生速度的值以及少数电荷载流子的寿命。

著录项

来源
《》|2004年|p.566-567|共2页
会议地点
作者
Rozhkov; V.A.; Rodionov; M.A.; Pashin; A.V.; Guriyanov; A.M.;
展开▼
作者单位

展开▼
会议组织
原文格式 PDF
正文语种
中图分类无线电电子学、电信技术;
关键词
silicon; varactors; MIS devices; surface states; dysprosium compounds; gadolinium compounds; carrier lifetime; aluminium; dielectric thin films; silicon MIS-varactors; double layer dielectric films; rare-earth oxides; electrical properties; physical properties; aluminium; dysprosium oxide; gadolinium oxide; silicon; surface states density; semiconductor-dielectric interface; surface generation velocity; minority charge carrier lifetime; Al-Dy/sub 2/O/sub 3/-Gd/sub 2/O/sub 3/-Si;

机译：硅;变容二极管; MIS器件;表面状态; dy化合物; ga化合物;载流子寿命;铝;介电薄膜;硅MIS变容二极管;双层介电膜;稀土氧化物;电学性能;物理性能;铝;氧化s氧化ga;硅;表面态密度;半导体-电介质界面;表面生成速度;少数载流子寿命; Al-Dy / sub 2 / O / sub 3 / -Gd / sub 2 / O / sub 3 / -Si;

相似文献

外文文献
中文文献
专利

1. Free-standing epitaxial silicon thin films for solar cells grown on double porous layers of silicon and electrochemically oxidized porous silicon dioxide [J] . Lukianov Anatolii, Ihara Manabu Thin Solid Films . 2018,第feba28期

机译：用于太阳能电池的自支撑外延硅薄膜，生长在硅和电化学氧化的多孔二氧化硅双多孔层上
2. Multilayer MoS₂ Thin-Film Transistors Employing Silicon Nitride and Silicon Oxide Dielectric Layers [J] . Czang-Ho Lee, Nicholas Vardy, William S. Wong IEEE Electron Device Letters . 2016,第6期

机译：利用氮化硅和氧化硅介电层的多层MoS _{2 薄膜晶体管}
3. Charge transport and trapping in silicon nitride‐silicon dioxide dielectric double layers [J] . Journal of Applied Physics . 1985,第11期

机译：氮化硅-二氧化硅介电双层中的电荷传输和俘获
4. Silicon MIS-varactors with the double layer dielectric films from rare-earth oxides [C] . Rozhkov V.A., Rodionov M.A., Pashin A.V., International Crimean Conference on Microwave and Telecommunication Technology . 2004

机译：具有来自稀土氧化物的双层电介质膜的硅误差变容膜
5. Methyl-doped silicon oxide film for inter-layer dielectric applications in copper interconnect technology. [D] . Cui, Hao. 2002

机译：甲基掺杂的氧化硅膜，用于铜互连技术中的层间电介质应用。
6. Hydrothermal-assisted exfoliation of Y/Tb/Eu ternary layered rare-earth hydroxides into tens of micron-sized unilamellar nanosheets for highly oriented and color-tunable nano-phosphor films [O] . Qi Zhu, Zhixin Xu, Ji-Guang Li, 2015

机译：Y / Tb / Eu三元层状稀土氢氧化物的水热辅助剥落成数十微米大小的单层纳米片用于高度定向和颜色可调的纳米磷光膜
7. Ternary rare-earth metal oxide high-k layers on silicon oxide [O] . Zhao C., Witters T., Schlom D. G., 2005

机译：氧化硅上的三元稀土金属氧化物高k层
8. Dielectric Properties of Silicon Dioxide and Silicon-Oxynitride Sol/Gel Thin Films [R] . Carman, L. A., Pantano, C. G. 1986

机译：二氧化硅和硅氮氧化物溶胶/凝胶薄膜的介电性能

Silicon MIS-varactors with the double layer dielectric films from rare-earth oxides

摘要

著录项

相似文献

相关主题

期刊订阅