首页> 外国专利> Polysilazane coating liquid for forming interlayer dielectric coating film and method of forming silicon dioxide interlayer dielectric coating film using same

Polysilazane coating liquid for forming interlayer dielectric coating film and method of forming silicon dioxide interlayer dielectric coating film using same

机译:用于形成层间电介质涂膜的聚硅氮烷涂布液和使用其的二氧化硅层间电介质涂膜的形成方法

摘要

Storage stability, and the production of the excellent coating properties, a variety of electronic devices, and an object of the invention to provide a coating solution used for forming the interlayer insulating film of SiO2, solvent is preferably a main component of the coating liquid dialkyl ether, 1 H The NMR spectrum is characterized in that the polysilazane compound is adjusted with a trimethylsilylating agent such as hexamethyldisilazane such that the area ratio of the SiH 3 peak to the total area of the SiH 1 and SiH 2 peaks is 0.15 to 0.45. In addition, after applying this coating liquid to a board | substrate and drying the coating layer, an interlayer insulation film can be formed by baking a dried coating layer at 300-800 degreeC under humidified atmosphere. The coating liquid further contains a trialkylamine compound as an inhibitor for inhibiting the sublimation of low molecular weight components of the polysilazane compound, and the trialkylamine is maintained by maintaining the coating layer before drying at 25 to 100 ° C. for at least 1 minute. And the reaction of the polysilazane molecule is terminated.
机译:本发明的目的是提供用于形成SiO 2的层间绝缘膜的涂布液,其中,溶剂优选为涂布液二烷基的主要成分。醚, 1 H NMR谱图的特征在于,用三甲基硅烷化剂(如六甲基二硅氮烷)调节聚硅氮烷化合物,使SiH 3 峰与总峰的面积比SiH 1 和SiH 2 峰的峰面积为0.15至0.45。此外,将这种涂料液涂到板上后,在基板上干燥涂层后,可以通过在300〜800℃,加湿气氛下烘烤干燥后的涂层来形成层间绝缘膜。涂布液还包含三烷基胺化合物作为抑制剂,用于抑制聚硅氮烷化合物的低分子量组分的升华,并且通过在25至100℃下干燥涂层之前将涂层保持至少1分钟来保持三烷基胺。并且终止了聚硅氮烷分子的反应。

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