Polysilazane-based coating solution for the formation of interlayer insulating coating film and Method for the formation of silicon dioxide-based interlayer insulating coating film using the same

摘要

Excellent storage stability and coating properties, the production of various electronic devices, and an object thereof is to provide a coating solution used for formation of an interlayer insulating film of SiO _2, the solvent is preferably a main component of the coating liquid dialkyl ether, ¹ In the H-NMR spectrum, a polysilazane compound adjusted with a trimethylsilylating agent such as hexamethyldisilazane such that the area ratio of the SiH ₃ peak to the total area of the SiH ₁ and SiH ₂ peaks is 0.15 to 0.45. . In addition, after applying this coating liquid to a board | substrate and drying the coating layer, an interlayer insulation film can be formed by baking a dried coating layer at 300-800 degreeC under humidified atmosphere. The coating liquid further contains a compound, and the reaction of the trialkylamine and the polysilazane molecule is terminated by maintaining the coating layer before drying at 25 to 100 ° C. for at least 1 minute.