Novel design methodology for short-channel MOSFET analog circuits

摘要

This paper presents a methodology that addresses short-channel effects to design MOSFET circuits. The circuit design is based on a combination of parameter extraction and simple analytical models that allows precise results. The extraction mainly depends on the inversion level, which is independent of geometry, therefore providing points that are applicable to a wide variety of circuits. Trade-offs and design space of the device are clearly brought to the circuit design. Hand calculations and simulations of a common-source amplifier illustrate the methodology.