Large-signal state-space model for Ge-based MHEMTs: construction and validation by an amplifier in multilayer thin-film technology

摘要

We construct a large-signal state-space model for thin-film metamorphic HEMTs based on germanium, directly from time-domain large-signal measurements. These thin-film HEMTs are used in a feedback amplifier circuit, designed as a multichip module with deposited thin layers (MCM-D) on glass. For the first time, we show that this type of state-space model can accurately predict the large-signal behaviour of a feedback amplifier.