80-110 GHz MMIC AMPLIFIERS USING A 0.1-μm GaAs-BASED mHEMT TECHNOLOGY

摘要

A 80-110 GHz broadband MMIC low noise amplifiers (LNAs) have been developed for W-band passive image sensors. A monolithic microwave integrated circuit (MMIC) LNAs consists of a fourstage single-ended type and a four-stage balanced type. The chip set was fabricated using a 0.1-μm gate-length InGaAs/InAlAs/GaAs metamorphic high electron mobility transistor process based on a four-inch substrate. The single-ended type LNA (ver.1) achieved a gain of 20 dB over in a band between 85 and 105 GHz and a noise figure of lower than 5.3 dB in a frequency range of 86.5-100 GHz. The single-ended type LNA (ver.2) exhibited a gain of 27 dB with a noise figure of 4.3 dB at 94 GHz. The external DC biasing conditions of V_(ds) and V_(gs) were 1 and -0.2 V, respectively, and the total current consumption of the LNA was 40 mA. The chip size was 2×1.2 mm~2. The balanced-type amplifier demonstrated a measured small signal gain of over 18 dB from 80 to 100 GHz. The external DC biasing conditions of V_(ds) and V_(gs) were 1 and -0.2 V, respectively, and the total current consumption was 82 mA. The chip size was 2.9×2.5 mm~2.