Low threshold, room temperature laser diode pumped Sb-based VECSEL emitting around 2.1 /spl mu/m

摘要

The operation of a diode-pumped AlGaAsSb/GaInAsSb type-I quantum-well vertical external cavity surface emitting laser (VECSEL) emitting near 2.1 /spl mu/m is reported. The epitaxial structure, grown on GaSb by molecular beam epitaxy consists of a GaSb/AlAsSb Bragg reflector and a GaInAsSb/AlGaAsSb active region. A TEM/sub 00/ low-divergence laser operation is demonstrated in quasi-CW (10 /spl mu/s pulses, 10% duty cycle) from 250 up to 350 K. A threshold as low as 390 W/cm/sup 2/ at 250 K combined with a T/sub 0/ around 33 K has been measured.