high electron mobility transistors; electron beam lithography; indium compounds; aluminium compounds; gallium arsenide; III-V semiconductors; semiconductor device measurement; integrated optoelectronics; metamorphic high electron-mobility transistor; reflowed submicron T-gate; HEMT; high-speed optoelectronics; In/sub 0.53/Al/sub 0.47/As/InGaAs HEMT; saturation drain current; transconductance; noise figure; e-beam lithography; 1.2 V; 0.1 mum; 160 mum; 18 GHz; In/sub 0.53/Al/sub 0.47/As-InGaAs;
机译:低温下大栅宽变质高电子迁移率晶体管的稳定性研究
机译:45nm高In组分变质In 0.7 sub> Ga 0.3 sub> As / In 0.6 sub> Ga 0.4 sub>复合通道的制备GaAs衬底上的高电子迁移率晶体管
机译:多栅极馈送结构对0.1- $ mu {hbox {m}} $变质高电子迁移率晶体管的栅极电阻和RF特性的影响
机译:具有回流亚微米T型栅极的变质高电子移动晶体管,高速光电应用
机译:纳米膜叠层电子和光电器件以及应变通道柔性高速晶体管
机译:基于晶体管关联技术的深亚微米EGFET用于化学传感
机译:具有回流亚微米T型门的低噪声变质HEMT
机译:用于光电应用的变质Inassb / alInassb异质结构。