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The magnitude of potential exposure tool induced CD and OL errors in the double exposure dipole (DDL) for 65 nm and 45 nm technology nodes

机译：对于65 nm和45 nm技术节点，潜在的曝光工具会在双曝光偶极（DDL）中引起CD和OL错误。

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In this paper, we investigate the CD and OL errors due to exposure tools, such as the illuminator imperfections, for example, the pole intensity imbalance (PIB), and aberration induced CD, and image placement errors (IPE).

机译：在本文中，我们研究了由于曝光工具引起的CD和OL错误，例如照明器缺陷，例如极强度不平衡（PIB），像差引起的CD和图像放置错误（IPE）。

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《》|2003年|p.32-33|共2页
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Tsann-Bim Chiou; Shih-En Tseng; Chen; A.C.;
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中图分类无线电电子学、电信技术;
关键词
errors; masks; aberrations; double exposure dipole; exposure tools; illuminator imperfections; pole intensity imbalance; aberration; image placement errors; CD error; 65 nm; 45 nm;

机译：误差;掩模;像差;二次曝光偶极子;曝光工具;照明器缺陷;极强度不平衡;像差;图像放置误差; CD误差; 65 nm; 45 nm;

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1. The Magnitude of Potential Exposure-Tool-Induced Critical Dimension and Overlay Errors in Double Dipole Lithography for the 65-nm and 45-nm Technology Nodes [J] . Tsann-Bim CHIOU, Alek C. CHEN, Shih-En TSENG, Japanese Journal of Applied Physics. Part 1, Regular Papers & Short Notes . 2004,第6B期

机译：在65纳米和45纳米技术节点的双偶极光刻技术中，潜在的曝光工具引起的临界尺寸和重叠误差的大小
2. Complementary double-exposure technique (CODE): a way to print 80- and 65-nm gate levels using a double-exposure binary mask approach [J] . Serdar Manakli, Yorick Trouiller, Olivier Toublan, Journal of Microlithography, Microfabrication, and Microsystems. (JM3) . 2004,第2期

机译：互补双曝光技术（CODE）：一种使用双曝光二进制掩模方法打印80纳米和65纳米栅极电平的方法
3. Complementary double-exposure technique (CODE): a way to print 80- and 65-nm gate levels using a double-exposure binary mask approach [J] . Serdar Manakli, Yorick Trouiller, Olivier Toublan, Journal of Microlithography, Microfabrication, and Microsystems. (JM3) . 2004,第2期

机译：互补双曝光技术（CODE）：一种使用双曝光二进制掩模方法打印80纳米和65纳米栅极电平的方法
4. The magnitude of potential exposure tool induced CD and OL errors in the double exposure dipole (DDL) for 65 nm and 45 nm technology nodes [C] . Tsann-Bim Chiou, Shih-En Tseng, Chen A.C. International Microprocesses and Nanotechnology Conference . 2003

机译：双曝光偶极子（DDL）中的潜在曝光工具诱导的CD和OL误差为65nm和45nm技术节点
5. The Military Deployment Human Exposure Assessment Study (MDHEXAS): Blood and urine exposure biomarkers as environmental surveillance tools for assessing military personnel exposure to chemicals during deployment to Camp McGovern, Bosnia. [D] . May, Lisa M. 2003

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6. Urban and transport planning environmental exposures and health-new concepts methods and tools to improve health in cities [O] . Mark J. Nieuwenhuijsen 2016

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The magnitude of potential exposure tool induced CD and OL errors in the double exposure dipole (DDL) for 65 nm and 45 nm technology nodes

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