silicon compounds; wide band gap semiconductors; MOSFET; carrier mobility; leakage currents; semiconductor device models; temperature dependence; MOSFET device properties; 6H-silicon carbide; 4H-silicon carbide; threshold voltage; carrier mobility; leakage current; contact region resistances; SiC;
机译:4H和6H碳化硅(SiC)中MOSFET器件特性的温度依赖性
机译:4H和6H碳化硅(SiC)中MOSFET器件特性的温度依赖性
机译:温度变化(300-600 K)对6H碳化硅MOSFET建模的影响
机译:MOSFET器件特性在4H-和6H-碳化硅(SIC)中的温度依赖性
机译:4H和6H碳化硅中的MOSFET建模,仿真和参数提取。
机译:通过室温μ-光致发光和μ-拉曼分析表征3C-SiC外延层截面中的4H和6H类堆积缺陷
机译:温度和开关速率对碳化硅肖特基势垒二极管和MOSFET动态特性的影响
机译:6H碳化硅中的高温整流器和mOs器件