Electron cyclotron resonance-reactive ion etching of InGaAs/InAlAs/InP multilayer structure and GaN by cyclic injection of CH/sub 4//H/sub 2//Ar and O/sub 2/ with constant Ar flow

摘要

In this paper, we showed the combination of continuous etching and cyclic etching with/without constant Ar flow to each multilayer structure such as InGaAs/InAlAs/InP for optical devices such as lasers and optical modulators. We also applied cyclic etching with constant Ar flow to GaN, and obtained good surface morphology and etching characteristics.