Realization of real index-guided InGaAlP red lasers with buried tunnel junctions

摘要

Summary form only given. We demonstrate an alternative way to achieve real index-guided InGaAlP lasers by introducing buried tunnel junctions. Introducing buried tunnel junctions in InGaAlP lasers has several advantages including selective tunneling current, self current blocking, real index-guided structure, low internal loss and one step re-growth. The laser structure is grown in a low pressure MOCVD system. Laser output power and forward voltage versus current characteristics for two types of lasers under CW operation are reported at room temperature.