Method for producing a buried tunnel junction in a surface emitting semiconductor laser and surface emitting semiconductor laser

摘要

The layer provided for a tunnel junction (1) is laterally stripped by material-selective etching to the desired diameter of the tunnel junction. In a second stage, it is heated in a suitable atmosphere. This continues until the etched gap is sealed by mass transfer from at least one semiconductor layer (2, 3) bordering on the tunnel junction. An independent claim is included for the corresponding semiconductor laser.