首页> 外国专利> SURFACE EMITTING SEMICONDUCTOR LASER, SURFACE EMITTING SEMICONDUCTOR LASER ARRAY, SURFACE EMITTING SEMICONDUCTOR LASER DEVICE, OPTICAL TRANSMISSION DEVICE, INFORMATION PROCESSING APPARATUS, AND METHOD OF PRODUCING SURFACE EMITTING SEMICONDUCTOR LASER

SURFACE EMITTING SEMICONDUCTOR LASER, SURFACE EMITTING SEMICONDUCTOR LASER ARRAY, SURFACE EMITTING SEMICONDUCTOR LASER DEVICE, OPTICAL TRANSMISSION DEVICE, INFORMATION PROCESSING APPARATUS, AND METHOD OF PRODUCING SURFACE EMITTING SEMICONDUCTOR LASER

机译:表面发射半导体激光器,表面发射半导体激光器阵列,表面发射半导体激光器设备,光学传输设备,信息处理设备以及制造表面发射半导体激光器的方法

摘要

A surface emitting semiconductor laser includes a substrate, a first conductivity-type first semiconductor multilayer reflector, an active layer, a semiconductor layer, a second conductivity-type second semiconductor multilayer reflector that includes a current confinement layer, and a heat dissipating metal member. At least the first semiconductor multilayer reflector, the active layer, the semiconductor layer, and the second semiconductor multilayer reflector are stacked in this order on the substrate. A columnar structure having a top portion, a side surface, and a bottom portion is formed from the second semiconductor multilayer reflector to the semiconductor layer. The heat dissipating metal member is connected to the semiconductor layer exposed at the bottom portion of the columnar structure.
机译:表面发射半导体激光器包括基板,第一导电类型的第一半导体多层反射器,有源层,半导体层,包括电流限制层的第二导电类型的第二半导体多层反射器和散热金属构件。至少第一半导体多层反射器,有源层,半导体层和第二半导体多层反射器以此顺序堆叠在基板上。从第二半导体多层反射器到半导体层形成具有顶部,侧面和底部的柱状结构。散热金属构件连接到在柱状结构的底部暴露的半导体层。

著录项

  • 公开/公告号US2015099317A1

    专利类型

  • 公开/公告日2015-04-09

    原文格式PDF

  • 申请/专利权人 FUJI XEROX CO. LTD.;

    申请/专利号US201414275227

  • 申请日2014-05-12

  • 分类号H01S5/024;G03G15/04;H04B10/50;H01S5/183;

  • 国家 US

  • 入库时间 2022-08-21 15:21:15

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