A study and control of lattice sites of N and Ga/In/N interdiffusion in dilute nitride quantum wells

摘要

We report on nitrogen incorporation and Ga/In/N interdiffusion in Ga/sub 1-x/In/sub x/N/sub y/As/sub 1-y/ / GaAs quantum wells (QW's) grown at T/sub gr/ /spl ap/ 450/spl deg/C by MBE. We studied effects of the distribution of interstitial and substitutional nitrogen and Ga/In/N interdiffusion on optical properties of the QW's and the ways of suppressing diffusion. The results are summarised here.