机译:1.55μm光通信系统中晶格匹配的Ⅲ-Ⅴ稀氮化铋量子阱的电子能带结构和光学增益
School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore and OPTIMUS, Centre for OptoEIectronics and Biophotonics, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore;
School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore and OPTIMUS, Centre for OptoEIectronics and Biophotonics, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore;
School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore and OPTIMUS, Centre for OptoEIectronics and Biophotonics, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore;
机译:用于通信系统的稀氮化物量子阱垂直腔半导体光放大器的光学设计
机译:λ〜1.3μm光通信窗口具有内部增益的稀氮化物共振腔增强光电探测器
机译:基于应变Si / SiGe / Si超晶格的P-i-n红外光电探测器中用于1.3-1.55μm光通信的量子传输建模
机译:半导体稀抗体结构的电子带结构
机译:磷化铟与晶格匹配的长波长垂直腔面发射激光器,用于光纤通信。
机译:用于光通信的1.3μm稀氮化物HELLISH-VCSOA的增益研究
机译:晶格匹配III-V的电子能带结构和光学增益 稀释氮化物bismide量子阱为1.55 $ \ mu $ m光通信 系统