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Single electron transistors as far-infrared photon detectors

机译:单电子晶体管作为远红外光子探测器

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The single electron transistor (SET) is able to detect polarization within small objects caused by individual electrons. This property can be utilized to realize high sensitive detection of electromagnetic waves reaching single photon counting level, if individual photons affect on an electron distribution within tiny devices capacitively coupled to SET. The best candidates for the detection are quantum dots (QDs) in two-dimensional electron gas (2DEG). Here, we explore far infrared (FIR) detectors based on two photo-excitation mechanisms in 2DEG: (i) cyclotron resonance (CR) absorption in high magnetic fields and (ii) collective mode excitations at a characteristic frequency of the parabolic confinement potential in the absence of magnetic fields.
机译:单电子晶体管(SET)能够检测由单个电子引起的小物体内的极化。如果单个光子影响与SET电容耦合的微型设备中的电子分布,则可以利用此属性来实现对达到单个光子计数级别的电磁波的高灵敏度检测。最适合检测的是二维电子气(2DEG)中的量子点(QD)。在这里,我们基于2DEG中的两种光激发机制探索远红外(FIR)检测器:(i)强磁场中的回旋共振(CR)吸收,以及(ii)抛物线约束势在特征频率下的集体模式激发没有磁场。

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