Field effect transistor with 170 nm gate fabricated by atomic force lithography

摘要

High-speed FETs require the ability to fabricate fine metallic lines for short-gate-length devices. In this work, an atomic force microscope was used to pattern narrow lines in resist for gate definition. Subsequent processes were used to fabricate the metallic gate structure in an epitaxial GaAs metal-semiconductor field effect transistor. All fabrication steps were carried out in our laboratories, including crystal growth. An operational transistor with a 170 nm-gate length was achieved.