Extraction of sheet resistance from four-terminal sheet resistors replicated in monocrystalline films with non-planar geometries

摘要

This paper describes methods for the extraction of sheet resistance from V/I measurements made on four-terminal sheet resistors incorporated into electrical linewidth test structures patterned with nonplanar geometries in monocrystalline silicon-on-insulator films. The end application is using the uniquely high repeatability and low cost of electrical CD (critical dimension) metrology to serve as a secondary reference in establishing a traceability path for CD-reference artifacts.