首页> 外文会议> >Development of 2 stage bump forming method using wire bonding technique
【24h】

Development of 2 stage bump forming method using wire bonding technique

机译:利用引线键合技术开发两阶段凸点形成方法

获取原文

摘要

Among the features of SBB (Stud Bump Bonding), which is a flip-chip mounting method, there is a "2 stage bump formed by wire bonding technique". In order to form the 2 stage bump the second bonding process must be added to the first, which is necessary for conventional wire bonding. To stabilize the second bonding, techniques are needed: to assure the Au-Au junction between a bump base formed by the first bonding and gold wire; and to stabilize the gold wire break point after the second bonding. The authors make clear the influence on these techniques of the capillary profile and heat influenced area, or recrystallization area, which appears when a ball is formed at the top of the gold wire. They confirm that, by properly selecting such conditions, the second bonding can be stable and a 2 stage bump of high quality is formed in actual mass production.
机译:作为倒装芯片安装方法的SBB(柱形凸块键合)的特征中,有一种“通过引线键合技术形成的两级凸块”。为了形成两阶段的凸块,必须将第二焊接工艺添加到第一焊接工艺中,这对于常规的引线键合是必需的。为了使第二键合稳定,需要采取以下技术:确保由第一键合形成的凸块基底与金线之间的Au-Au结;并在第二次焊接后稳定金线断裂点。作者清楚地说明了这些技术对毛细管轮廓和受热影响区域(或再结晶区域)的影响,当金线顶部形成球时会出现这种影响。他们证实,通过适当地选择这样的条件,第二键合可以是稳定的,并且在实际的批量生产中形成了高质量的两级凸块。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号