Optical modulators in the 500-600-nm visible wavelength regime using an Al/sub x/Ga/sub 1-x/As/Al/sub y/Ga/sub 1-y/As MOCVD-grown AFPM

摘要

Summary form only given. We have demonstrated the growth of good quality, high reflectivity mirrors at wavelengths as low as 550 nm and electroabsorption between 580 and 540 nm in AlGaAs/AlAs MQWs. We present details on these and results on the characterization of the modulator grown by integrating the mirror and the MQW structures in a Fabry-Perot cavity.