Strain overcompensated GaInP/AlGaInP quantum well laser structures for improved reliability at high output powers

摘要

Strain overcompensated multiple quantum well laser structures have been analyzed theoretically as well as experimentally for the first time. Strain overcompensation reduces the bandgap shrinkage which normally takes place at the facets due to compressive strain relaxation. This results in a lower temperature rise of the lasing spot leading to a remarkable improvement of the reliability of high power laser diodes.