Strain-overcompensated GaInP-AlGaInP quantum-well laser structures for improved reliability at high-output powers

摘要

Strain-overcompensated multiple-quantum-well (MQW) laser structures have been analyzed theoretically as well as experimentally for the first time. Strain overcompensation reduces the bandgap shrinkage that normally takes place at the facets of compressively strained layers because of strain relaxation. This results in a lower absorption of the laser spot leading to a remarkable improvement of the reliability of high-power laser diodes.