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Frequency multiplication and mixing on InP and GaAs Schottky diodes in IR and FIR regions and their use for optical time clock

机译:IR和FIR区域中InP和GaAs肖特基二极管的倍频和混频及其在光学时钟中的应用

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InP and GaAs Schottky-barrier diodes (SBD) were examined as nonlinear elements for frequency conversion in IR (30 THz) and conversion multiplier in far IR waves. In FIR wave region harmonics with number N=37 at a frequency of 1.63 THz and with N=27 at a frequency of 2.45 THz are obtained at GaAs SBD from a millimetre-band oscillator. Use of a submillimetre (SMM) CH/sub 2/F/sub 2/-laser (1626.6 GHz) and a mm wave oscillator (64.6 GHz) allowed one to observe a frequency difference between two laser lines of 1691.21 GHz with InP SBD and 146 GHz with GaAs SBD.
机译:InP和GaAs肖特基势垒二极管(SBD)被作为非线性元件进行了红外(30 THz)频率转换和远红外波转换倍频。在FIR波区域中,从毫米带振荡器获得的GaAs SBD处谐波数为N = 37,频率为1.63 THz,N = 27,频率为2.45 THz。使用亚毫米级(SMM)CH / sub 2 / F / sub 2 /激光器(1626.6 GHz)和毫米波振荡器(64.6 GHz),可以观察到InP SBD和MM分别产生的1691.21 GHz激光线之间的频率差。带有GaAs SBD的146 GHz。

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