A new type MOS-gated tunnel transistor with a Schottky barrier

机译：具有肖特基势垒的新型MOS门控隧道晶体管

获取原文

页面导航

摘要
著录项
相似文献
相关主题

摘要

A new type tunnel transistor, in which electrons can tunnel through the Schottky barrier between the Schottky metal and the accumulation layer formed at the interface by a MOS gate just on the Schottky junction to control the tunneling current, is proposed and demonstrated.

机译：一种新型隧道晶体管，其中电子可以通过肖特基金属和在界面形成在界面上的肖特基层之间的肖特基屏障隧道，并在肖特基结的界面上形成的肖特基接合以控制隧道电流，并进行说明。

著录项

来源
《》|1995年|P.387-390|共4页
会议地点
作者
Kimura; M.;
展开▼
作者单位

展开▼
会议组织
原文格式 PDF
正文语种
中图分类无线电电子学、电信技术;
关键词

相似文献

外文文献
中文文献
专利

1. Characteristics of n-Type Asymmetric Schottky-Barrier Transistors with Silicided Schottky-Barrier Source and Heavily n-Type Doped Channel and Drain [J] . Zer-Ming Lin, Horng-Chih Lin, Tiao-Yuan Huang Japanese journal of applied physics . 2012,第6Issue1期

机译：具有硅化肖特基势垒源和重掺杂n型沟道和漏极的n型非对称肖特基势垒晶体管的特性
2. Comparison Study of Tunneling Models for Schottky Field Effect Transistors and the Effect of Schottky Barrier Lowering [J] . Reinaldo A. Vega IEEE Transactions on Electron Devices . 2006,第7期

机译：肖特基场效应晶体管隧穿模型与肖特基势垒降低效应的比较研究
3. Ultralow Schottky Barriers in Hexagonal Boron Nitride-Encapsulated Monolayer WSe2 Tunnel Field-Effect Transistors [J] . Pande Gaurav, Siao Jyun-Yan, Chen Wei-Liang, ACS applied materials & interfaces . 2020,第16期

机译：六角形氮化物氮化物封装单层WSE2隧道场效应晶体管中的UltraLow肖特基障碍
4. A new type MOS-gated tunnel transistor with a Schottky barrier [C] . Kimura M., Institute of Electric and Electronic Engineer IEEE Region 10 International Conference on Microelectronics and VLSI . 1995

机译：一种具有肖特基障碍的新型MOS门隧道晶体管
5. The fabrication, microstructural characterization, and internal photoresponse of platinum silicide/p-type silicon and iridium silicide/p-type silicon Schottky barrier photodetectors for infrared focal plane arrays [D] . Mercer, Douglas Edward 1990

机译：红外焦平面阵列用硅化铂/ p型硅和硅化铱/ p型硅肖特基势垒光电探测器的制造，微观结构表征和内部光响应
6. Giant tunnelling electroresistance in metal/ferroelectric/semiconductor tunnel junctions by engineering the Schottky barrier [O] . Zhongnan Xi, Jieji Ruan, Chen Li, -1

机译：通过设计肖特基势垒在金属/铁电/半导体隧道结中的巨大隧道电阻
7. A Novel High Schottky Barrier Based Bilateral Gate and Assistant Gate Controlled Bidirectional Tunnel Field Effect Transistor [O] . Xi Liu, Kailu Ma, Yicheng Wang, 2020

机译：基于高肖特基势垒的双边门和辅助栅极控制双向隧道场效应晶体管
8. Study and Analysis of AlGaAs/GaAs Modulation Doped Field-Effect Transistors Incorporating P-Type Schottky Gate Barriers [R] . Priddy, K. L. 1985

机译：掺入p型肖特基栅极势垒的alGaas / Gaas调制掺杂场效应晶体管的研究与分析

A new type MOS-gated tunnel transistor with a Schottky barrier

摘要

著录项

相似文献

相关主题

期刊订阅