Characterization and improvements of flash EEPROM endurance performance by integrating optimized process modules in advanced flash technology

摘要

The effects of process modules of tunnel oxide, barrier metal, and passivation films on the endurance performance of flash EEPROM devices have been extensively characterized. It is found that dilute wet O/sub 2/+N/sub 2/O anneal for tunnel oxide, Ti/TiN as barrier metals, and SOG as interlayer passivation can greatly improve endurance performance and greatly reduce Gm degradation.