首页> 外文会议> >A 0.18 /spl mu/m CMOS hot-standby phase-locked loop using a noise-immune adaptive-gain voltage-controlled oscillator
【24h】

A 0.18 /spl mu/m CMOS hot-standby phase-locked loop using a noise-immune adaptive-gain voltage-controlled oscillator

机译:使用抗噪自适应增益压控振荡器的0.18 / spl mu / m CMOS热备用锁相环

获取原文

摘要

This PLL features a hot-standby PLL (HSPLL) architecture and noise-immune circuit techniques. With this architecture, both fast lock time and low jitter are achieved by the system transfer function being changed; it is unnecessary to vary the values of system parameters in an attempt to reduce lock time. The HSPLL uses a reconfigurable delay line (RDL) that, depending upon the state of its switch circuit (SC), can operate either as a voltage-controlled delay line (VCDL) or a voltage-controlled oscillator (VCO). When the RDL is operating as a VCDL (i.e. when the total circuit is a VCDL-PLL, a first-order system), lock time is fast and jitter is low, but it is difficult to generate a frequency-multiplied signal. This makes the VCDL-PLL configuration appropriate for the unlocked state. Then, at the instant that the HSPLL changes from the unlocked state to the locked, the condition of the SC is changed to create a VCO-PLL, a second-order system in which it is easy to generate a frequency-multiplied signal but difficult to achieve fast lock time (i.e. a situation well-suited to a locked state). This HSPLL architecture allows use of the respective advantages of both VCDL- and VCO-PLLs without having to suffer from their various disadvantages. The HSPLL is implemented in 0.18 /spl mu/m CMOS and two-layer metal technology. 2010 transistors are integrated into a 480/spl times/450 /spl mu/m/sup 2/ die area. The supply voltage is 1.0 V, the power dissipation is about 2 mW, the input signal frequency is 50 MHz, and the output signal frequency is 200 MHz.
机译:该PLL具有热备用PLL(HSPLL)架构和抗噪声电路技术。通过这种体系结构,通过更改系统传递函数既可以实现快速锁定时间,又可以实现低抖动。不必为了减少锁定时间而更改系统参数的值。 HSPLL使用可重新配置的延迟线(RDL),根据其开关电路(SC)的状态,它可以作为压控延迟线(VCDL)或压控振荡器(VCO)进行操作。当RDL作为VCDL工作时(即当整个电路是VCDL-PLL,即一阶系统)时,锁定时间很快且抖动很低,但是很难产生倍频信号。这使得VCDL-PLL配置适合于解锁状态。然后,在HSPLL从解锁状态变为锁定状态的那一刻,SC的条件发生变化,以创建VCO-PLL,这是一种二阶系统,其中容易产生倍频信号,但很难以实现快速锁定时间(即非常适合锁定状态的情况)。这种HSPLL架构允许使用VCDL和VCO-PLL各自的优点,而不必遭受其各种缺点的困扰。 HSPLL采用0.18 / spl mu / m CMOS和两层金属技术实现。 2010晶体管被集成到480 / spl次/ 450 / spl mu / m / sup 2 /芯片面积中。电源电压为1.0 V,功耗约为2 mW,输入信号频率为50 MHz,输出信号频率为200 MHz。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号