Internal opto-electric properties of p-i-n a-Si:H solar cell on grooved TCO texture

摘要

Effects of textured TCO layer on a-Si:H solar cell electric properties are investigated by computer modelling of thermal equilibrium profiles of charge carriers, electric field and potential distribution. 2D analysis of p-i-n a-Si:H cell on TCO layer, simulated by V-grooved morphology, was performed using the commercial program MEDICI, for which input data were modified in order to account for continuous distribution of states in the gap of a-Si:H. Results of calculations show strongly increased trapped hole concentration at the p-i interface around the peaks of the illuminated side of V-shaped grooves. At these locations, the built-in electric field is lowered so that the collection of light-generated carriers in these regions is reduced. The paper also demonstrates the dependence of the light generation profile on the wavelength of incident light and on V-groove tilt angle.