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Buried heterostructure surface emitting laser diodes fabricated using integrated vacuum processing

机译:使用集成真空工艺制造的埋入异质结构表面发射激光二极管

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In this paper, we describe an in-situ process in which etching and regrowth are performed in controlled vacuum environments without exposing samples to air. The etching includes electron cyclotron resonance (ECR) plasma H/sub 2/ to remove the native oxides, ECR SiCl/sub 4/ to etch anisotropically, and/or a brief Cl/sub 2/ chemical etch to remove any near surface damage. Solid-source molecular beam epitaxy (MBE) is used for regrowth. We have applied this in-situ all vacuum processing to the fabrication of buried heterostructure vertical cavity surface emitting laser diodes.
机译:在本文中,我们描述了一种原位工艺,其中在受控的真空环境中执行蚀刻和再生长,而不将样品暴露于空气中。蚀刻包括电子回旋共振(ECR)等离子体H / sub 2 /以去除自然氧化物,ECR SiCl / sub 4 /以各向异性进行蚀刻,和/或短暂的Cl / sub 2 /化学蚀刻以去除任何近表面损坏。固体源分子束外延(MBE)用于再生。我们已经将此原位所有真空处理应用于掩埋异质结构垂直腔表面发射激光二极管的制造。

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