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Optimum redundancy design for new-generation EPROMs based on yield analysis of previous generation

机译:基于上一代产品良率分析的新一代EPROM的最佳冗余设计

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Failure modes of 4 Mbit EPROMs have been analyzed, and the model to formulate them is proposed. The redundancy scheme of a 16 Mbit EPROM was optimized by the model in consideration of area penalty. In applying the 4 Mbit data to 16 Mbit EPROM, fabrication line improvement was taken into account. The actual data of 16 Mbit EPROM failure analysis indicate the effectiveness of the prediction. The 16 Mbit EPROM has 2 rows*8 blocks redundancy, and the redundancy gives the highest yield in the time when the mass production begins.
机译:分析了4 Mbit EPROM的失效模式,并提出了建立它们的模型。该模型考虑了面积损失,对16 Mbit EPROM的冗余方案进行了优化。在将4 Mbit数据应用于16 Mbit EPROM时,考虑了生产线的改进。 16 Mbit EPROM故障分析的实际数据表明了该预测的有效性。 16 Mbit EPROM具有2行* 8块冗余,在批量生产开始时,该冗余可提供最高的良率。

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