This HSG-Si cylindrical capacitor structure achieves a cell capacitance of 30 fF with 0.4 mu m-high storage electrode in a 0.72 mu m/sup 2/ cell area. A new selective etching technique using a low-pressure vapor hydrogen fluoride is developed to form the cylindrical capacitor electrode. The high selective etching (2000 times) of borophosphosilicate-glass to SiO/sub 2/ is realized. Disilane molecule irradiation in ultra-high vacuum chamber achieves the HSG-Si formation on the whole surface of phosphorous doped amorphous Si cylindrical electrode.
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机译：这种HSG-Si圆柱形电容器结构在0.72μm/ sup 2 /单元面积上具有0.4μm高的存储电极，可实现30 fF的单元电容。开发了一种使用低压蒸气氟化氢的新的选择性蚀刻技术，以形成圆柱形电容器电极。实现了硼磷硅玻璃对SiO / sub 2 /的高选择性腐蚀（2000倍）。超高真空室中的乙硅烷分子辐照可在磷掺杂非晶硅圆柱电极的整个表面上形成HSG-Si。
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