Electrical and dielectric properties of DRAM capacitors.

摘要

The technology of higher density memories continues to be an important issue in semiconductor development due to large and ever increasing demand for DRAM (Dynamic Random Access Memory) in the growth of all types of computers, optical wave guide devices, spatial light modulators, pyroelectric detectors, etc. Higher levels of integration have resulted in dramatic progress. The growth of MOS DRAM has been facilitated by the key invention of one transistor and one capacitor (1T-1C). Ferroelectrics (with general chemical formulae ABO3, e.g. BaTiO3, BaSrTiO3, PbTiO3 , LaTiO3, SrTiO3, etc) thin film capacitors are found to be most suitable for the fulfillment of the properties of DRAM capacitors. Pulsed Laser Deposition technique was used for deposition of oriented and epitaxial layers on substrate materials (Si (100), LaAlO3 (100), SrTiO3 (100), etc.). XRD (X-ray diffraction) and TEM (Transmission Electron Microscopy), respectively, was used to study the morphology and orientation of the grown films. (Abstract shortened by UMI.)