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机译:用于MIM电容器DRAM应用的HfErO_x电介质的结构和电气特性
Analog Devices, Raheen Business Park, Limerick, Ireland,Tyndall National Institute, University College Cork, Cork, Ireland;
Tyndall National Institute, University College Cork, Cork, Ireland;
Tyndall National Institute, University College Cork, Cork, Ireland;
Tyndall National Institute, University College Cork, Cork, Ireland;
Tyndall National Institute, University College Cork, Cork, Ireland;
Tyndall National Institute, University College Cork, Cork, Ireland;
Solar World Innovations CmbH, BerthelsdorferStr. Ill A D-09599 Freiberg/Sachsen, Germany;
ASM Microchemistry Ltd.. 00560 Helsinki, Finland;
ASM Microchemistry Ltd.. 00560 Helsinki, Finland;
Glebe Scientific Ltd., Newport, Co. Tipperary, Ireland;
Tyndall National Institute, University College Cork, Cork, Ireland;
ALD; capacitor; dynamic random access memory (DRAM); high-k; metal-insulator-metal (MIM); HfD-04;
机译:用于模拟IC应用的电介质嵌入式MIM电容器的结构和电气特性
机译:具有$ {rm ZrO} _ {2} $绝缘子的高级MIM电容器的电气特性,用于高密度封装和RF应用
机译:用于II型电容器的(1-x)MgTiO_3 -x Ba_(0.5)Sr_(0.)5TiO_3复合陶瓷的结构,电和介电研究
机译:用于混合信号应用的MIM电容器的电介质(氧化物,氮化物,氮氧化物)的电气特性
机译:DRAM电容器的电和介电特性。
机译:微波退火介电增强沉积原子层的Al2O3 / ZrO2 / Al2O3 MIM电容器
机译:用于MIM电容器的NB掺杂A-HFO2介电膜的电性能提高