Microwave noise figure in MESFETs and HEMTs with kink-effect and (or) parallel conduction

摘要

The authors consider the influence of the kink effect often noticed in MESFETs and HEMTs (high electron mobility transistors) and the parallel conduction sometimes observed in HEMTs on the microwave noise figure. It is found that the kink effect mostly affects MESFET noise and that parallel conduction affects HEMT noise, especially when operated at large drain current. Consequences for optimal bias conditions for low noise amplifiers are outlined.