Investigation of the type inversion phenomena: resistivity and carrier mobility in the space charge region and electrical neutral bulk neutron irradiated silicon p/sup +/-n junction detectors

摘要

The changes of both effective impurity concentration N/sub eff/ and kinetics of charge collection in neutron-irradiated silicon p/sup +/-n junction detectors are studied in the range of neutron fluences phi /sub n/=5*10/sup 11/-6*10/sup 13/ n/cm/sup 2/. High resistivity in the ENB suggests that, while the carrier mobilities in the SCR are affected little in the fluence range studied (>1*10/sup 14/ n/cm/sup 2/), the hole mobility in the ENB may be degraded significantly.