Sheet resistance measurements of implanted layers on silicon wafers using a microwave resistivity probe

摘要

The authors present the use of microwave radiation at 35 GHz from an open-ended waveguide for measuring the sheet-resistance of implanted layers on high-resistivity silicon with dynamic range and spatial resolution comparable to those of four-point probes. The technique is capable of measuring implanted layers with doses in the range of 10/sup 12/ ions/cm/sup 2/ to 10/sup 16/ ions/cm/sup 2/.