Low threshold and low internal loss 1.55- mu m strained-layer single quantum well lasers

摘要

Low-threshold lasers are important for minimizing the power consumption and the crosstalk of parallel optical interconnects in switching and supercomputer applications. Low-threshold (319 A/cm/sup 2/) strained-layer single quantum well lasers with low internal loss (>or=3.9 cm/sup -1/) for the 1.55- mu m wavelength region are reported. Device fabrication and characteristics are described.