Investigation of effect of strain on low-threshold 1.3 mu m InGaAsP strained-layer quantum well lasers

摘要

The authors have investigated the effect of strain on 1.3 mu m InGaAsP lasers under the same well thickness (6 nm) and same lasing wavelength (1.34 mu m) by changing the In and As contents. The maximum photoluminescence intensity, the narrowest photoluminescence full width at half maximum (23 meV), and minimum threshold current density (450 A/cm/sup 2/) were obtained for 1.4% compressive strain. Moreover, a very low CW threshold current (1.3 mA) was also achieved in a 90-70% coated 200 mu m long device.