Hydrogenated amorphous silicon germanium (a-Si/sub 1-x/Ge/sub x/:H) alloys for solar cells are investigated to clarify the relation between microstructures and photoelectric properties. Medium-range order alloy structures are investigated using small-angle X-ray scattering with the aid of other techniques. A decrease in the densities of microstructures caused by (SiH/sub 2/)/sub n/, SiH/sub 3/, and SiH/sub 2/ is shown to be effective in improving the photoelectric properties in the Si-rich region. It is also shown that a-Si:H and a-Ge:H have a domain and wall-type microstructure. At around x=0.5, alloys are found to assume a fractal structure. This phenomenon seems to relate closely to drastic quality deterioration at E/sub g/>1.4 eV.
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机译：研究了用于太阳能电池的氢化非晶硅锗（a-Si / sub 1-x / Ge / sub x /：H）合金，以阐明微观结构与光电性能之间的关系。在其他技术的帮助下，使用小角度X射线散射研究了中程合金结构。由（SiH / sub 2 /）/ sub n /，SiH / sub 3 /和SiH / sub 2 /引起的微结构密度的降低显示出对改善富Si区域中的光电性能是有效的。还显示出a-Si：H和a-Ge：H具有畴和壁型微结构。在x ＝ 0.5附近，发现合金呈现分形结构。这种现象似乎与E / sub g /> 1.4 eV时质量急剧下降密切相关。
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