An Acoustic Sensor with the Resonant Tunnelling Effects of GaAs/AlAs/InGaAs Hetero Structures

机译：GaAs / AlAs / InGaAs异质结构共振隧穿效应的声传感器

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This paper reports an acoustic sensor based on AlAs/InGaAs/GaAs resonant tunnelling diode (RTD). The RTD is incorporated in a 10 mum thick cantilever using inductivity coupled plasma (ICP) technology and the fabrication of the cantilever diaphragm is base

机译：本文报道了一种基于AlAs / InGaAs / GaAs共振隧穿二极管（RTD）的声传感器。使用电感耦合等离子体（ICP）技术将RTD集成到10毫米厚的悬臂中，悬臂膜片的制造是基础

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来源
《Mechatronics and Automation, 2007 International Conference on》|2007年|P.3807-3811|共5页
会议地点 HarbinChina
作者
Zhaomin Tong; Cheyang Xue; Binzhen Zhang; Jian Wang; Shang Chen;
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III-V semiconductors; acoustic transducers; frequency response; gallium arsenide; resonant tunnelling diodes; InGaAs; acoustic sensor; current-voltage characteristics; elementary measurements; frequency 1.3 kHz; frequency response; heterostructures; inductivity coup;

机译：III-V半导体；声换能器；频率响应;砷化镓谐振隧道二极管；铟镓砷声音传感器电流电压特性；基本测量；频率1.3 kHz;频率响应;异质结构感应政变;

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专利

1. InGaAs/AlAs/InGaAsP resonant tunneling hot electron transistors grown by chemical beam epitaxy [J] . Chen W.L., Munns G.O. IEEE Transactions on Electron Devices . 1994,第2期

机译：化学束外延生长的InGaAs / AlAs / InGaAsP共振隧穿热电子晶体管
2. Strain Compensated InGaAs/AlAs Triple Barrier Resonant Tunneling Structures for THz Applications [J] . Craig P. Allford, Philip D. Buckle Terahertz Science and Technology, IEEE Transactions on . 2017,第6期

机译：太赫兹应用的应变补偿InGaAs / AlAs三重势垒共振隧穿结构
3. Hole spin injection from a GaMnAs layer into GaAs-AlAs-InGaAs resonant tunneling diodes [J] . Rodrigues D. H., Brasil M. J. S. P., Orlita M., Journal of Physics, D. Applied Physics: A Europhysics Journal . 2016,第16期

机译：从GaMnAs层将空穴自旋注入GaAs-AlAs-InGaAs共振隧穿二极管
4. An Acoustic Sensor with the Resonant Tunnelling Effects of GaAs/AlAs/InGaAs Hetero Structures [C] . Tong, Zhaomin, Xue, . 2007

机译：GaAs / AlAs / InGaAs异质结构共振隧穿效应的声传感器
5. Mixed As/Sb and tensile strained Ge/InGaAs heterostructures for low-power tunnel field effect transistors [D] . Zhu, Yan. 2014

机译：低功率隧道场效应晶体管的混合As / Sb和拉伸应变的Ge / InGaAs异质结构
6. A comparative study of low energy radiation response of AlAs GaAs and GaAs/AlAs superlattice and the damage effects on their electronic structures [O] . M. Jiang, H. Y. Xiao, S. M. Peng, -1

机译：AlAsGaAs和GaAs / AlAs超晶格的低能辐射响应及其对电子结构的损伤作用的比较研究
7. Strain compensated InGaAs/AlAs triple barrier resonant tunnelling structures for THz applications [O] . Allford Craig, Buckle Philip 2017

机译：太赫兹应用的应变补偿InGaAs / AlAs三重势垒共振隧穿结构
8. Resonant Tunneling via X-Point States in AlAs-GaAs-AlAs Heterostructures [R] . Mendez, E. E., Wang, W. I., Calleja, E., 1987

机译：alas-Gaas-alas异质结构中X点状态的共振隧穿

An Acoustic Sensor with the Resonant Tunnelling Effects of GaAs/AlAs/InGaAs Hetero Structures

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