STMicroelectronics, 2070 Route 52, Hopewell Junction, NY 12533, U.S.A.;
GLOBALFOUNDR1ES, 2070 Route 52, Hopewell Junction, NY 12533, U.S.A.;
IBM Semiconductor Research and Development Center (SRDC), 2070 Route 52, Hopewell Junction, NY 12533, U.S.A.;
IBM Semiconductor Research and Development Center (SRDC), 2070 Route 52, Hopewell Junction, NY 12533, U.S.A.;
IBM Semiconductor Research and Development Center (SRDC), 2070 Route 52, Hopewell Junction, NY 12533, U.S.A.;
STMicroelectronics, 2070 Route 52, Hopewell Junction, NY 12533, U.S.A.;
GLOBALFOUNDR1ES, 2070 Route 52, Hopewell Junction, NY 12533, U.S.A.;
IBM Semiconductor Research and Development Center (SRDC), 2070 Route 52, Hopewell Junction, NY 12533, U.S.A.;
IBM Semiconductor Research and Development Center (SRDC), 2070 Route 52, Hopewell Junction, NY 12533, U.S.A.;
Infineon Technologies, 2070 Route 52, Hopewell Junction, NY 12533, U.S.A.;
STMicroelectronics, 2070 Route 52, Hopewell Junction, NY 12533, U.S.A.;
STMicroelectronics, 2070 Route 52, Hopewell Junction, NY 12533, U.S.A.;
STMicroelectronics, 2070 Route 52, Hopewell Junction, NY 12533, U.S.A.;
GLOBALFOUNDR1ES, 2070 Route 52, Hopewell Junction, NY 12533, U.S.A.;
IBM Semiconductor Research and Development Center (SRDC), 2070 Route 52, Hopewell Junction, NY 12533, U.S.A.;
GLOBALFOUNDR1ES, 2070 Route 52, Hopewell Junction, NY 12533, U.S.A.;
IBM Semiconductor Research and Development Center (SRDC), 2070 Route 52, Hopewell Junction, NY 12533, U.S.A.;
STMicroelectronics, 2070 Route 52, Hopewell Junction, NY 12533, U.S.A.;
机译:通过在钨 - 薄膜化学机械平坦化中使用苹果酸选择性剂,通过使用苹果酸选择性剂在钨膜和二氧化硅膜之间的高度选择性抛光速率
机译:间隙填充形貌图案化衬底的化学机械抛光方法制备的平面化纳米图案化介孔二氧化硅薄膜
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机译:优化波兰速率顺序的应力膜沉积序列,以获得最佳平面化
机译:薄膜在弹性基材上沉积的应力分析
机译:基于CFD模拟和相应表面模型的行星GaN-MOCVD薄膜沉积速率优化研究
机译:热线化学气相沉积反应器中柔性基板上的硅薄膜沉积参数的优化