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Hydrogen detection with semi metal graphite-ZnO (InP.GaN) Schottky diodes

机译:用半金属石墨-ZnO(InP.GaN)肖特基二极管检测氢

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We investigated Schottky diode hydrogen sensors prepared by printing colloidal graphite on ZnO, GaN, and InP substrates partly covered with Pt nanoparticles. A layer of Pt nanoparticles deposited by in-situ pulsed electrophoretic deposition from isooctane colloidal solutions was inserted between the semimetal graphite and the semiconductor surface to dissociate hydrogen molecules. Schottky diodes were investigated by the measurement of current-voltage characteristics and further tested for their sensitivity to hydrogen in a cell with a through-flow gas system. The sensing elements were sensitive to gas mixture with a low hydrogen concentration down to 1 ppm.
机译:我们研究了通过在部分覆盖有Pt纳米颗粒的ZnO,GaN和InP衬底上印刷胶体石墨而制备的肖特基二极管氢传感器。通过从异辛烷胶体溶液原位脉冲电泳沉积而沉积的Pt纳米颗粒层插入半金属石墨和半导体表面之间,以解离氢分子。通过测量电流-电压特性对肖特基二极管进行了研究,并进一步测试了肖特基二极管在具有流通气体系统的电池中对氢的敏感性。传感元件对低至1 ppm的低氢浓度的气体混合物敏感。

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